The Optimal Efficiency of Solar Cell Coated By In2O3 Using Fuzzy Logic

Abstract

In this work the fuzzy logic technique was used to obtain the optimal value for the basic parameters of silicon cell p-n type of In2O3 deposited onto the p-n junction's silicon solar cells, as antireflection coating، by rapid thermal oxidation at different a range of oxidation temperature up to (350-400-450C°) and thickness (200nm) on. The basic parameter of effieniecy cell & fill factor are maximum current (Im) & maximum voltage (Vm) which used as the input of fuzzy logic, The measurement of the short circuit current & open circuit voltage show improved with conversion efficiency of the p-n junction solar cell after coating by In2O3 film (3.95%) before coating and became (9.55%) after coatingwith thickness (200nm) and at 450C° oxidation temperature. The experimental results are identical with theoretical for this technique to get the maximum efficiency &fill factor.